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STD11NM60N-1 - STB11NM60N-1 STD11NM60N-STP11NM60N-STF11NM60N
N-channel 600V - 0.37 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmeshTM Power MOSFET
Features
Type STB11NM60N-1 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N VDSS (@TJmax) 650 V 650 V 650 V 650 V 650 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 < 0.45 ID
1 2
3
3
2 1
10 A 10 A 10 A 10 A(1) 10 A
TO-220
3 1
IPAK DPAK
3
1. Limited only by maximum temperature allowed
3 12
1
2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
IPAK
TO-220FP
Figure 1.
Internal schematic diagram
Application
Switching applications
Description
This series of devices is designed using the second generation of MDmeshTM Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Marking B11NM60N D11NM60N D11NM60N P11NM60N F11NM60N Package IPAK IPAK DPAK TO-220 TO-220FP Packaging Tube Tube Tape & reel Tube Tube
Order codes STB11NM60N-1 STD11NM60N-1 STD11NM60N STP11NM60N STF11NM60N
October 2007
Rev 3
1/18
www.st.com 18
Contents
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value Symbol Parameter TO-220/IPAK DPAK/IPAK VDS VGS ID ID IDM (2) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor dv/dt (3) VISO TJ Tstg Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;TC = 25 C) Operating junction temperature Storage temperature --55 to 150 10 6.3 40 90 0.8 15 2500 600 25 10(1) 6.3 (1) 40(1) 25 0.2 Unit TO-220FP V V A A A W W/C V/ns V C
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 10A, di/dt 400A/s, VDD =80% V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
TO-220 / IPAK DPAK / IPAK
Unit TO-220FP 5 C/W C/W C
Rthj-case Rthj-amb Tl
Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purposes
1.38 62.5 300
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) Single pulse avalanche energy (starting TJ = 25 C, ID = IAS, VDD = 50 V) Max value 3.5 200 Unit A mJ
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Electrical characteristics
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS dv/dt(1)
On/off states
Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDD = 400 V,ID = 5 A, VGS =10 V VDS = Max rating, VDS=Max rating,Tc=125C VGS = 20 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 5 A 2 3 0.37 Min. 600 45 1 10
100
Typ.
Max.
Unit V V/ns A A nA V
IDSS IGSS VGS(th) RDS(on)
1.
4 0.45
Characteristic value at turn off on inductive load
Table 6.
Symbol gfs(1) Ciss Coss Crss Coss eq.(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS =15 V, ID= 5 A Min. Typ. 7.5 850 44 5 130 Max. Unit S pF pF pF pF
VDS =50V, f=1MHz, VGS=0
VGS=0, VDS =0 V to 480 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD=480 V, ID = 10 A VGS =10 V (see Figure 19)
Rg
3.7
nC nC nC
Qg Qgs Qgd
1.
Total gate charge Gate-source charge Gate-drain charge
31 4.2 15.9
Pulsed: pulse duration = 300s, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 5 A, RG = 4.7 , VGS = 10 V (see Figure 18) (see Figure 23) Min. Typ. 22 18.5 50 12 Max. Unit ns ns ns ns
Table 8.
Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM
1.
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, VGS=0 ISD =10 A, di/dt =100 A/s, VDD =100 V, TJ = 25 C (see Figure 20) VDD =100 V di/dt =100 A/s, ISD = 10 A TJ = 150 C (see Figure 20) 340 3.26 19.2 460 4.42 19.2 Test conditions Min. Typ. Max. Unit 10 40 1.3 A A V ns C A ns C A
Pulsed: pulse duration = 300s, duty cycle 1.5%
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Electrical characteristics
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220 / IPAK Figure 3. Thermal impedance for TO-220 / IPAK
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Safe operating area for DPAK / IPAK Figure 7.
Thermal impedance for DPAK / IPAK
6/18
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Figure 8. Output characteristics Figure 9.
Electrical characteristics
Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
7/18
Electrical characteristics
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N Figure 15. Normalized on resistance vs temperature
Figure 14. Normalized gate threshold voltage vs temperature
Figure 16. Source-drain diode forward characteristics
Figure 17. Normalized BVDSS vs temperature
8/18
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Test circuit
3
Test circuit
Figure 19. Gate charge test circuit
Figure 18. Switching times test circuit for resistive load
Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
9/18
Package mechanical data
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
11/18
Package mechanical data
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
TO-220FP mechanical data
mm. Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 Typ. Max. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1
E H
F2
L2 L5
123
L4
12/18
G
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Package mechanical data
TO-251 (IPAK) mechanical data
DIM. Min. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm Typ. Max. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 Min. 0.086 0.035 0.027 0.025 0.204 inch Typ. Max. 0.094 0.043 0.051 0.031 0.212 0.033
H
C A C2
L2
D
B3 B6
A1
L
=
=
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
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Package mechanical data
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
DPAK mechanical data
mm. DIM. Min. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 Typ. Max. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 Typ. Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch
0068772-F
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STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Package mechanical data
TO-262 (I2PAK) mechanical data
mm. DIM. Min. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ. Max. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 Min. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ. Max. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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Packaging mechanical data
STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
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STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
Revision history
6
Revision history
Table 9.
Date 03-Aug-2006 14-Nov-2006 02-Oct-2007
Document revision history
Revision 1 2 3 First release Complete version Figure 8.: Output characteristics has been updated. Added new package (IPAK) Changes
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STD11NM60N/-1 - STB11NM60N-1 - STF11NM60N - STP11NM60N
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